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| BAT 68W Silicon Schottky Diodes Preliminary data * For mixer applications in the VHF/UHF range * For high speed switching BAT 68-04W BAT68-05W BAT68-06W Type BAT 68-04W BAT 68-05W BAT 68-06W BAT 68W Marking Ordering Code 84s 85s 86s 83s Q62702Q62702Q62702Q62702- Pin Configuration 1 = A1 1 = A1 1 = K1 1=A 2 = K2 2 = A2 2 = K2 n.c. Package 3 = K1/A2 SOT-323 3 = K1/K2 SOT-323 3 = A1/A2 SOT-323 3=K SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, BAT68W Symbol Values 8 130 150 150 150 - 65 ... + 150 - 65 ... + 150 435 550 355 390 K/W C Unit V mA mW VR IF TS=97C Ptot Total power dissipation, BAW68-04...06W TS=92C Ptot Junction temperature Tj Operating temperature range Storage temperature Thermal Resistance Junction - ambient, BAT68W Junction - ambient, BAT68-04W...06W Junctui - soldering point, BAT68W Junction - soldering point, BAT68-04W...06W Top Tstg RthJA RthJA RthJS RthJS Semiconductor Group 1 Dec-20-1996 BAT 68W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 8 318 390 - V A 0.1 1.2 mV 340 340 500 pF 1 10 I(BR) = 100 A Reverse current IR VR = 1 V, TA = 25 C VR = 1 V, TA = 60 C Forward voltage VF IF = 1 mA IF = 10 mA Diode capacitance CT RF VR = 1 V, f = 1 MHz Differential forward resistance IF = 5 mA Forward current IF = f (TA*;TS) BAT 68W 200 mA Forward current IF = f (TA*;TS) BAT 68-04W, -05W, -06W 200 mA *): mounted on alumina 15mm x 16.7mm x 0.7mm *): mounted on alumina 15mm x 16.7mm x 0.7mm IF 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 150 TA ,TS IF 160 140 TS TA 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 150 TA ,TS TA TS Semiconductor Group 2 Dec-20-1996 BAT 68W Permissible Pulse Load RTHJS = f(tp) BAT 68W Permissible Pulse Load IFmax/IFDC = f(tp) BAT 68W 10 3 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Permissible Pulse Load RTHJS = f(tp) BAT 68-04W, -05W, -06W Permissible Pulse Load IFmax/IFDC = f(tp) BAT 68-04W, -05W, -06W 10 3 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 3 Dec-20-1996 BAT 68W Diode capacitance CT = f (VR) f = 1MHz Differential forward resistance rf = f(IF) f = 10kHz Forward Current IF = f(VF) Reverse current IR = f (TA) VR = 28V Semiconductor Group 4 Dec-20-1996 |
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